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UH4PBC, UH4PCC, UH4PDC
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Vishay General Semiconductor
Revision: 29-May-12
3
Document Number: 88991
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES
(TA
= 25
°C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
0
1
2
3
4
5
0 25 50 75 100 125 150 175
A
v
erage Forward Re
ctified C
u
rrent (A)
Lead Temperature (°C)
Resistive or Inductive Load
TL
meas
ured
at the Cathode Band Terminal
0
0.4
0.8
1.2
1.6
2.2
0 0.4 1.2 1.6 2.0 2.40.4
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
Average Forward Current (A)
A
v
erage Power Loss (W)
D = tp/T tp
T
0.2
0.6
1.0
1.4
2.0
1.8
0.01
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
TA
= 150 °C
TA
= 125 °C
TA
= 25 °C
Instantaneous Forward Voltage (V)
Instantaneo
u
s Forward C
u
rrent (A)
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s Re
v
erse C
u
rrent (
μ
A)
TA
= 150 °C
TA
= 125 °C
TA
= 25 °C
10
100
0.1 1 10 100
Reverse Voltage (V)
J
u
nction Capacitance (pF)
TJ
= 25 °C
f = 1.0 MHz
Vsig
= 50 m
Vp-p
Junction to Ambient
0.01 0.1 1 10 100
1
10
100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
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